BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.
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SOT; The seating plane is electrically isolated from all terminals. Typical base-emitter and collector-emitter saturation voltages. Switching times waveforms with resistive load.
Typical base-emitter saturation voltage. But11ac the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Refer to mounting instructions for F-pack envelopes.
Test circuit inductive load. Normalised power derating and second breakdown curves. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
BUT11AF Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
August 2 Rev 1. Oscilloscope display for VCEOsust. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Application information Where application information is given, it is advisory and does not form part of the specification. Test circuit for VCEOsust. Forward bias safe operating area.
Stress above one or more of the limiting values may cause permanent damage to the device. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Publication thereof does not convey nor imply any license under patent or other industrial or dstasheet property rights. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Reverse bias safe operating area. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. August 7 Rev 1.
August 4 Ptot max and Ptot peak max lines. Product specification This data sheet contains final product specifications.
BUT11AF Datasheet(PDF) – Motorola, Inc
Extension for repetitive pulse operation. Switching times waveforms with inductive load. Typical DC current gain. Region of permissible DC operation.
August 8 Rev 1. Exposure to limiting values for extended periods may affect device reliability. No liability will be accepted by the publisher for any consequence of its use.
Test circuit resistive load. UNIT – – 1.