BUZ 73 L. V. 7 A. Ω. TO AB. CSA2. Maximum Ratings. Parameter. Symbol. Values. Unit. Continuous drain current. TC = 28 °C. ID. 7. A. BUZ73 from Motorola Solutions, Inc.. Find the PDF Datasheet, Specifications and Distributor Information. BUZ73 Datasheet, BUZ73 PDF, BUZ73 Data sheet, BUZ73 manual, BUZ73 pdf, BUZ73, datenblatt, Electronics BUZ73, alldatasheet, free, datasheet, Datasheets, .
|Published (Last):||12 April 2006|
|PDF File Size:||3.27 Mb|
|ePub File Size:||11.60 Mb|
|Price:||Free* [*Free Regsitration Required]|
One drawback is, that the on-state resistance of transistors with breakdown voltages above V is higher than the equivalent values for bipolar transistors of the same size. The heart of the circuit is the ATtiny12 programmed to time 24 hour cycles.
(PDF) BUZ73 Datasheet download
A gate-source voltage value which is smaller than the gate threshold voltage results in a highly resistive drain- source path. In or- der to protect the transistors from static charges during shipping, they are delivered in anti-static packaging.
The simple user interface is comprised of a resync button to synchronize the timer, a bypass switch to bypass the timer if desired, and two status indicator LEDs. An ATtiny12 controller as a timer and some switching circuitry turns the doorbell off for 10 hours at the same time each day. The datasheeg torque should not exceed 60 Ncm with the insulated construction.
The power supply filter capacitor is a mamoth uf rated at 40 volts so that it would be operated wll below its voltage and ripple current ratings, and can even loose a large percentage of its inital capacitance because of aging without affecting circuit operation. The screw head should not be located directly on the terminal, but over the pressure plate to distribute the force properly.
Electrical characteristics 23 3. This diode function is an integral property of the transistor. Compared with 60 Ncm, applying a max. This disadvantage, however, is compensated by higher speed, simpler drive circuitry, compatibility with integrated circuits, etc. Standards 13 Technical Information 14 1.
The inversion layer that forms the channel in the P region beneath the gate electrode, continues in form of an enhancement satasheet in the epitaxial layer beneath the whole datashdet surface.
A positive value corresponds to a positive voltage at the point defined by the first index, with respect to the point defined by the second index reference pointe.
No dataaheet, use these pages at your own risk. Eltec Siemens House Industrial estate 3 f. A basic type number consists of: Lot 1 8, Jalan P.
To extend the output power, they can easily be connected in parallel. The gate is left free in one small area of the chip for wire bonding. The circuit consists of a power supply, a capacitor back-up circuit, a Atmel ATtiny12 microcontroller as a timer, and solid state realy circuit to switch the AC voltage in the doorbell circuit. For the purposes of this notice, copying binary data resulting from program files, including assembly source code and object hex files into semiconductor memories for personal, nonprofit educational or other noncommercial use is not considered republishing.
Pulse width is para- meter. Box Taipei 5 3 6 31 71,03 2 7 satasheet 60 tai engco Thailand B. This makes it easy to change the timer’s cycle at any time by merely reaching up and pressing the button on the top of the box cover removed for the photograph.
BUZ73 Infineon Technologies, BUZ73 Datasheet
Approx, weight 12 g Type Ordering code 1. Type designation code 10 1. The values of the constants and of C hold true in static air up to an ambient temperature of approx. Therefore, cross-slotted screws are preferred.
The specified gate-source voltage V GS is set.
Repeated bending of the leads should be avoided. Kettaneh Freres Medawar P. Single row deep groove ball bearings The single row deepgroove ball bearing is the most popular bearing. The transistor can be destroyed by even momentary voltage spikes.
Should the source connection potential be located above the one of the drain connection, the transistor will function dataaheet a bipolar diode; i. The transistor blocks the current flow when the drain-source voltage is positive.